Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

Genhua Pan; Bing Li; Mark Heath; David Horsell; M. Lesley Wears; LA Taan; Shakil Awan

doi:10.1016/j.carbon.2013.08.036

Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

Genhua Pan^*, Bing Li, Mark Heath, David Horsell, M. Lesley Wears, LA Taan, Shakil Awan

^*Corresponding author for this work

School of Engineering, Computing and Mathematics

Research output: Contribution to journal › Article › peer-review

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Original language	English
Pages (from-to)	349-358
Number of pages	0
Journal	Carbon
Volume	65
Issue number	0
DOIs	https://doi.org/10.1016/j.carbon.2013.08.036
Publication status	Published - 1 Dec 2013

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10.1016/j.carbon.2013.08.036

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title = "Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films",

author = "Genhua Pan and Bing Li and Mark Heath and David Horsell and Wears, \{M. Lesley\} and LA Taan and Shakil Awan",

year = "2013",

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day = "1",

doi = "10.1016/j.carbon.2013.08.036",

language = "English",

volume = "65",

pages = "349--358",

journal = "Carbon",

issn = "0008-6223",

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TY - JOUR

T1 - Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

AU - Pan, Genhua

AU - Li, Bing

AU - Heath, Mark

AU - Horsell, David

AU - Wears, M. Lesley

AU - Taan, LA

AU - Awan, Shakil

PY - 2013/12/1

Y1 - 2013/12/1

UR - https://pearl.plymouth.ac.uk/secam-research/675/

U2 - 10.1016/j.carbon.2013.08.036

DO - 10.1016/j.carbon.2013.08.036

M3 - Article

SN - 0008-6223

VL - 65

SP - 349

EP - 358

JO - Carbon

JF - Carbon

IS - 0

ER -

Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

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