The free layer reversal of spin valves studies by planar hall effect

Z. Q. Lu, G. Pan, W. Y. Lai, D. J. Mapps, W. W. Clegg

Research output: Contribution to journalConference proceedings published in a journalpeer-review

Abstract

The free layer reversal of spin valves studies was discussed by planar Hall effect (PHE). The anisotropic magnetoresistance (AMR) was used as a probe of magnetization reversal and domain structure in small-size system. The samples for MR and PHE measurements were lithographically pattern into six terminal bars, 200μm wide between PHE terminals and 1mm long between MR terminals. An unusual upward and downward jump in the PHE voltage, superimposed on the normal curves at the switching fields was observed.

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