The free layer reversal of spin valves studies by planar hall effect

ZQ Lu; G Pan; WY Lai; DJ Mapps; WW Clegg

The free layer reversal of spin valves studies by planar hall effect

ZQ Lu, G Pan, WY Lai, DJ Mapps, WW Clegg

School of Engineering, Computing and Mathematics

Research output: Contribution to journal › Conference proceedings published in a journal › peer-review

Abstract

The free layer reversal of spin valves studies was discussed by planar Hall effect (PHE). The anisotropic magnetoresistance (AMR) was used as a probe of magnetization reversal and domain structure in small-size system. The samples for MR and PHE measurements were lithographically pattern into six terminal bars, 200μm wide between PHE terminals and 1mm long between MR terminals. An unusual upward and downward jump in the PHE voltage, superimposed on the normal curves at the switching fields was observed.

Original language	English
Number of pages	0
Journal	Digests of the Intermag Conference
Volume	0
Issue number	0
Publication status	Published - 1 Dec 2002

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title = "The free layer reversal of spin valves studies by planar hall effect",

abstract = "The free layer reversal of spin valves studies was discussed by planar Hall effect (PHE). The anisotropic magnetoresistance (AMR) was used as a probe of magnetization reversal and domain structure in small-size system. The samples for MR and PHE measurements were lithographically pattern into six terminal bars, 200μm wide between PHE terminals and 1mm long between MR terminals. An unusual upward and downward jump in the PHE voltage, superimposed on the normal curves at the switching fields was observed.",

author = "ZQ Lu and G Pan and WY Lai and DJ Mapps and WW Clegg",

year = "2002",

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T1 - The free layer reversal of spin valves studies by planar hall effect

AU - Lu, ZQ

AU - Pan, G

AU - Lai, WY

AU - Mapps, DJ

AU - Clegg, WW

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The free layer reversal of spin valves studies was discussed by planar Hall effect (PHE). The anisotropic magnetoresistance (AMR) was used as a probe of magnetization reversal and domain structure in small-size system. The samples for MR and PHE measurements were lithographically pattern into six terminal bars, 200μm wide between PHE terminals and 1mm long between MR terminals. An unusual upward and downward jump in the PHE voltage, superimposed on the normal curves at the switching fields was observed.

AB - The free layer reversal of spin valves studies was discussed by planar Hall effect (PHE). The anisotropic magnetoresistance (AMR) was used as a probe of magnetization reversal and domain structure in small-size system. The samples for MR and PHE measurements were lithographically pattern into six terminal bars, 200μm wide between PHE terminals and 1mm long between MR terminals. An unusual upward and downward jump in the PHE voltage, superimposed on the normal curves at the switching fields was observed.

M3 - Conference proceedings published in a journal

SN - 0074-6843

VL - 0

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

IS - 0

ER -

The free layer reversal of spin valves studies by planar hall effect

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