PMN-PT thin films grown by sputtering on silicon substrate:: influence of the annealing temperature on the physico-chemical and electrical properties of the films

D Remiens; M Detalle; R Herdier; C Soyer; G Wang; D Jenkins; P Roussel

doi:10.1163/156856708783623465

PMN-PT thin films grown by sputtering on silicon substrate:: influence of the annealing temperature on the physico-chemical and electrical properties of the films

D Remiens, M Detalle, R Herdier, C Soyer, G Wang, D Jenkins, P Roussel

School of Engineering, Computing and Mathematics

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	201-215
Number of pages	0
Journal	Research on Chemical Intermediates
Volume	34
Issue number	0
DOIs	https://doi.org/10.1163/156856708783623465
Publication status	Published - 2008

Keywords

annealing temperature
silicon
thin film
piezoelectricity
electrostrictivity

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1163/156856708783623465

Cite this

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title = "PMN-PT thin films grown by sputtering on silicon substrate:: influence of the annealing temperature on the physico-chemical and electrical properties of the films",

keywords = "annealing temperature, silicon, thin film, piezoelectricity, electrostrictivity",

author = "D Remiens and M Detalle and R Herdier and C Soyer and G Wang and D Jenkins and P Roussel",

year = "2008",

doi = "10.1163/156856708783623465",

language = "English",

volume = "34",

pages = "201--215",

journal = "Research on Chemical Intermediates",

issn = "0922-6168",

publisher = "Springer Netherlands",

number = "0",

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TY - JOUR

T1 - PMN-PT thin films grown by sputtering on silicon substrate:: influence of the annealing temperature on the physico-chemical and electrical properties of the films

AU - Remiens, D

AU - Detalle, M

AU - Herdier, R

AU - Soyer, C

AU - Wang, G

AU - Jenkins, D

AU - Roussel, P

PY - 2008

Y1 - 2008

KW - annealing temperature

KW - silicon

KW - thin film

KW - piezoelectricity

KW - electrostrictivity

U2 - 10.1163/156856708783623465

DO - 10.1163/156856708783623465

M3 - Conference article

SN - 0922-6168

VL - 34

SP - 201

EP - 215

JO - Research on Chemical Intermediates

JF - Research on Chemical Intermediates

IS - 0

ER -