Piezoelectric thin films for MEMS applications-A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering

R Herdier; M Detalle; D Jenkins; C Soyer; D Remiens

doi:10.1016/j.sna.2008.07.021

Piezoelectric thin films for MEMS applications-A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering

R Herdier, M Detalle, D Jenkins, C Soyer, D Remiens

School of Engineering, Computing and Mathematics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	122-128
Number of pages	0
Journal	SENSORS AND ACTUATORS A-PHYSICAL
Volume	148
Issue number	1
DOIs	https://doi.org/10.1016/j.sna.2008.07.021
Publication status	Published - 2008

Keywords

Piezoelectric properties
PMN-PT
PZT
Ferroelectricity
Thin films

Access to Document

10.1016/j.sna.2008.07.021

Cite this

@article{45cf37d59e114597a69e756bda9389b3,

title = "Piezoelectric thin films for MEMS applications-A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering",

keywords = "Piezoelectric properties, PMN-PT, PZT, Ferroelectricity, Thin films",

author = "R Herdier and M Detalle and D Jenkins and C Soyer and D Remiens",

year = "2008",

doi = "10.1016/j.sna.2008.07.021",

language = "English",

volume = "148",

pages = "122--128",

journal = "SENSORS AND ACTUATORS A-PHYSICAL",

issn = "0924-4247",

number = "1",

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T1 - Piezoelectric thin films for MEMS applications-A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering

AU - Herdier, R

AU - Detalle, M

AU - Jenkins, D

AU - Soyer, C

AU - Remiens, D

PY - 2008

Y1 - 2008

KW - Piezoelectric properties

KW - PMN-PT

KW - PZT

KW - Ferroelectricity

KW - Thin films

U2 - 10.1016/j.sna.2008.07.021

DO - 10.1016/j.sna.2008.07.021

M3 - Article

SN - 0924-4247

VL - 148

SP - 122

EP - 128

JO - SENSORS AND ACTUATORS A-PHYSICAL

JF - SENSORS AND ACTUATORS A-PHYSICAL

IS - 1

ER -