Abstract
A reliable nanofabrication process for hard templates in SiC amorphous film was developed. The process involves high resolution electron beam lithography and reactive ion etch for nanosize structures in SiC. Study of the RIE property in SiC narrow trenches and dot array indicates that various profiles of sidewall can be achieved by controlling the etch power and ratio of fluorine-based gas mixture. It was also discovered that SiC material is RIE lag free in dry etch, which opens up a broader applications for deep and narrow structures. Applications of SiC templates for hot embossing into metals and plastics prove that the SiC templates formed in amorphous film are hard enough for the fabrications of metallic photonic structures and meta materials. (C) 2008 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 1147-1151 |
Number of pages | 0 |
Journal | Microelectronic Engineering |
Volume | 85 |
Issue number | 0 |
DOIs | |
Publication status | Published - 1 May 2008 |
Event | Microelectronic Engineering - Duration: 1 May 2008 → … |