Effect of rapid thermal heating on the unidirectional exchange anisotropy of ni8ifei9/femn system with very thin ni8ifei9 layers

G. Pan; S. Huo; D. Mapps; W. Clegg; R. A. Buckley

doi:10.1109/20.800707

Effect of rapid thermal heating on the unidirectional exchange anisotropy of ni8ifei9/femn system with very thin ni8ifei9 layers

G. Pan^*, S. Huo, D. Mapps, W. Clegg, R. A. Buckley

^*Corresponding author for this work

School of Engineering, Computing and Mathematics

Research output: Contribution to journal › Article › peer-review

Abstract

The unidirectional exchange anisotropy field, H_w, of NiFe(tNiFt)/FeMn(15nm) with very small IMF from 3 nm to 25 nm was studied by heating the NiFe films using an in-situ rapid thermal heater during sputtering. A critical NiFe film thickness of about IS nm was found. When taiFc was below IS nm, the Hua of NiFe/FeMn films was enhanced by in-situ heating, compared with that of films deposited without heating. However, no significant difference of Hu between the films with and without in-situ heating were observed for films with NiFe film thicker than IS nm and the dependence of HUB on NIFe film thickness roughly obeys 1/tiwe dependence, X-ray diffraction examination of these films suggests that a better epitaxial growth and improved crystallinity of the yFeMn(lll)/NIFe(lll) might be responsible for the enhanced HU11 at NIFe/FeMn interface.

Original language	English
Pages (from-to)	3916-3918
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.800707
Publication status	Published - 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Nifc/femn
Rapid thermal heating
Thickness dependence
Unidirectional exchange anlsotropy

Access to Document

10.1109/20.800707

Cite this

@article{5807373043b245759c7f22a55fe882c6,

title = "Effect of rapid thermal heating on the unidirectional exchange anisotropy of ni8ifei9/femn system with very thin ni8ifei9 layers",

abstract = "The unidirectional exchange anisotropy field, Hw, of NiFe(tNiFt)/FeMn(15nm) with very small IMF from 3 nm to 25 nm was studied by heating the NiFe films using an in-situ rapid thermal heater during sputtering. A critical NiFe film thickness of about IS nm was found. When taiFc was below IS nm, the Hua of NiFe/FeMn films was enhanced by in-situ heating, compared with that of films deposited without heating. However, no significant difference of Hu between the films with and without in-situ heating were observed for films with NiFe film thicker than IS nm and the dependence of HUB on NIFe film thickness roughly obeys 1/tiwe dependence, X-ray diffraction examination of these films suggests that a better epitaxial growth and improved crystallinity of the yFeMn(lll)/NIFe(lll) might be responsible for the enhanced HU11 at NIFe/FeMn interface.",

keywords = "Nifc/femn, Rapid thermal heating, Thickness dependence, Unidirectional exchange anlsotropy",

author = "G. Pan and S. Huo and D. Mapps and W. Clegg and Buckley, \{R. A.\}",

year = "1999",

doi = "10.1109/20.800707",

language = "English",

volume = "35",

pages = "3916--3918",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

}

TY - JOUR

T1 - Effect of rapid thermal heating on the unidirectional exchange anisotropy of ni8ifei9/femn system with very thin ni8ifei9 layers

AU - Pan, G.

AU - Huo, S.

AU - Mapps, D.

AU - Clegg, W.

AU - Buckley, R. A.

PY - 1999

Y1 - 1999

N2 - The unidirectional exchange anisotropy field, Hw, of NiFe(tNiFt)/FeMn(15nm) with very small IMF from 3 nm to 25 nm was studied by heating the NiFe films using an in-situ rapid thermal heater during sputtering. A critical NiFe film thickness of about IS nm was found. When taiFc was below IS nm, the Hua of NiFe/FeMn films was enhanced by in-situ heating, compared with that of films deposited without heating. However, no significant difference of Hu between the films with and without in-situ heating were observed for films with NiFe film thicker than IS nm and the dependence of HUB on NIFe film thickness roughly obeys 1/tiwe dependence, X-ray diffraction examination of these films suggests that a better epitaxial growth and improved crystallinity of the yFeMn(lll)/NIFe(lll) might be responsible for the enhanced HU11 at NIFe/FeMn interface.

AB - The unidirectional exchange anisotropy field, Hw, of NiFe(tNiFt)/FeMn(15nm) with very small IMF from 3 nm to 25 nm was studied by heating the NiFe films using an in-situ rapid thermal heater during sputtering. A critical NiFe film thickness of about IS nm was found. When taiFc was below IS nm, the Hua of NiFe/FeMn films was enhanced by in-situ heating, compared with that of films deposited without heating. However, no significant difference of Hu between the films with and without in-situ heating were observed for films with NiFe film thicker than IS nm and the dependence of HUB on NIFe film thickness roughly obeys 1/tiwe dependence, X-ray diffraction examination of these films suggests that a better epitaxial growth and improved crystallinity of the yFeMn(lll)/NIFe(lll) might be responsible for the enhanced HU11 at NIFe/FeMn interface.

KW - Nifc/femn

KW - Rapid thermal heating

KW - Thickness dependence

KW - Unidirectional exchange anlsotropy

UR - http://www.scopus.com/inward/record.url?scp=0033184289&partnerID=8YFLogxK

U2 - 10.1109/20.800707

DO - 10.1109/20.800707

M3 - Article

AN - SCOPUS:0033184289

SN - 0018-9464

VL - 35

SP - 3916

EP - 3918

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 2

ER -

Effect of rapid thermal heating on the unidirectional exchange anisotropy of ni8ifei9/femn system with very thin ni8ifei9 layers

Abstract

ASJC Scopus subject areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this