Effect of rapid thermal heating on the unidirectional exchange anisotropy of Ni81Fe19/FeMn system with very thin Ni81Fe19 layers

The unidirectional exchange anisotropy field, H-ua, of NiFe(t(NiFe))/FeMn(15nm) with very small t(NiFe) from 3 nm to 25 nm was studied by heating the NiFe films using an in-situ rapid thermal heater during sputtering. A critical NiFe film thickness of about 15 nm was found. When t(NiFe) was below 15 nm, the H-ua of NiFe/FeMn films was enhanced by in-situ heating, compared with that of films deposited without heating. However, no significant difference of Hut between the films with and without in-situ heating were observed for films with NiFe film thicker than 15 nm and the dependence of H-ua on NiFe film thickness roughly obeys 1/t(NiFe) dependence. X-ray diffraction examination of these films suggests that a better epitaxial growth and improved crystallinity of the gamma-FeMn(111)/NiFe(111) might be responsible for the enhanced. H-ua at NiFe/FeMn interface.